The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Apr. 29, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chung-Pin Huang, New Taipei, TW;
Hou-Yu Chen, Hsinchu County, TW;
Chuan-Li Chen, Yunlin County, TW;
Chih-Kuan Yu, Nantou County, TW;
Yao-Ling Huang, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a first gate, a second gate, a third gate, and a fourth gate over a substrate, in which a first distance between the first gate and the second gate is less than a second distance between the third gate and the fourth gate. A first spacer over a sidewall of the first gate, a second spacer over a sidewall of the second gate, a third spacer over a sidewall of the third gate, and a fourth spacer over a sidewall of the fourth gate are formed. A mask layer over the first and second spacers is formed, in which the third and fourth spacers are exposed from the mask layer. The exposed third and fourth spacers are trimmed.