The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jul. 16, 2019
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Junhong Feng, Shanghai, CN;
Abstract
Anti-fuse structure circuit and method of forming an anti-fuse structure circuit are provided. A substrate is provided, and an anti-fuse is formed on the substrate by forming a first gate structure and a dielectric layer on the substrate and forming conductive plugs respectively in the dielectric layer at two sides of the first gate structure. The dielectric layer covers the first gate structure, and the conductive plugs have a width decreasing from top to bottom. A second gate structure is formed on the substrate. A top surface of the first gate structure is higher than a top surface of the second gate structure. The dielectric layer also covers the second gate structure. The conductive plugs are also located respectively in the dielectric layer at two sides of the second gate structure.