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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10854543 B1

PDFFull Text
Date of Patent:
Dec. 01, 2020

Filed:

Oct. 02, 2015

Semiconductor device and manufacturing method therefor

Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Shin Takizawa, Kariya, JP;

Takashi Nakano, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 27/01 (2006.01); H01C 7/00 (2006.01); H01L 27/08 (2006.01); H01L 27/10 (2006.01); H01L 49/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); H01C 7/006 (2013.01); H01L 23/564 (2013.01); H01L 27/016 (2013.01); H01L 27/0802 (2013.01); H01L 27/101 (2013.01); H01L 28/20 (2013.01); H01L 28/24 (2013.01);
Abstract

A semiconductor device includes: a substrate; a first wiring layer arranged above the substrate; a first insulating film covering the first wiring layer; a lower oxidation preventing film arranged on the first insulating film; at least one thin-film resistor arranged on the lower oxidation preventing film; an upper oxidation preventing film arranged on the at least one thin-film resistor; a second insulating film covering the lower oxidation preventing film, the at least one thin-film resistor, and the upper oxidation preventing film; a second wiring layer arranged on the second insulating film; and a third insulating film covering the second wiring layer. The first wiring layer overlaps an end portion of the at least one thin-film resistor when viewed in a normal direction of one surface of the substrate.

Find Patent Forward Citations

Takizawa, Shin. (2020). Semiconductor device and manufacturing method therefor (U.S. Patent No. 10854543). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10854543

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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