The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Apr. 23, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/764 (2006.01); H01L 29/06 (2006.01); H01L 27/108 (2006.01); H01L 27/11582 (2017.01); H01L 49/02 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76805 (2013.01); H01L 27/108 (2013.01); H01L 27/11582 (2013.01); H01L 28/00 (2013.01); H01L 29/0649 (2013.01); H01L 21/76838 (2013.01); H01L 21/76883 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 29/4991 (2013.01);
Abstract
A memory device with a dielectric layer or an air gap between contacts and a method of making the same are disclosed. The method comprises a series of steps including forming a plurality of conductive lines having trenches therebetween; forming a contact layer in the trench; and forming a dielectric layer interposed in the contact layer and configured to divide the contact layer into two contacts. The method also comprises removing the dielectric layer to form a space and forming a cap layer over the two contacts to form an air gap therein. The method further comprises forming a second air gap between the conductive line and the two contacts.