The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jul. 10, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Nobuhiro Takahashi, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32449 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01); H01L 27/1085 (2013.01); H01L 28/60 (2013.01); H01L 28/91 (2013.01); H01J 2237/334 (2013.01);
Abstract
There is provided an etching method which includes: preparing a target substrate having a silicon portion, a silicon nitride film and a silicon oxide film; and selectively etching the silicon portion with respect to the silicon nitride film and the silicon oxide film by supplying a fluorine-containing gas and an inert gas which stay in an excited state to the target substrate.