The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Sep. 30, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yihong Chen, San Jose, CA (US);
Yong Wu, Sunnyvale, CA (US);
Chia Cheng Chin, Santa Clara, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Kelvin Chan, San Ramon, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02664 (2013.01); H01L 21/28518 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01);
Abstract
Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.