The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Jul. 25, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Scott E. Smith, Plano, TX (US);

Michael A. Shore, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/406 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 11/406 (2013.01); G11C 11/4085 (2013.01); G11C 11/4087 (2013.01);
Abstract

Memory devices, systems including memory devices, and methods of operating memory devices in which redundancy match is disabled to permit activating more word lines in parallel during refresh operations to increase a refresh rate of memory cells in a memory array. In one embodiment, a memory device is provided, comprising a memory array including a plurality of word lines arranged in a plurality of memory banks. The memory device further comprises circuitry configured to (i) store a value indicating one or more addresses corresponding to word lines in the plurality of word lines, (ii) disable redundancy match, (iii) activate one or more first word lines in the memory array corresponding to the one or more addresses indicated by the value to refresh first data stored in the memory array, and (iv) update the value based at least in part on activating the one or more first word lines.


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