The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Jul. 30, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Jason T. Zawodny, Grand Rapids, MI (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/402 (2006.01); G11C 11/406 (2006.01); G11C 11/403 (2006.01); G11C 5/02 (2006.01); G11C 7/10 (2006.01); G11C 11/407 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4023 (2013.01); G11C 5/025 (2013.01); G11C 7/1006 (2013.01); G11C 11/402 (2013.01); G11C 11/403 (2013.01); G11C 11/406 (2013.01); G11C 11/407 (2013.01); G11C 2211/4068 (2013.01);
Abstract

The present disclosure includes apparatuses and methods related to compute components formed over an array of storage elements. An example apparatus comprises a base substrate material and an array of memory cells formed over the base substrate material. The array can include a plurality of access transistors comprising a first semiconductor material. A compute component can be formed over and coupled to the array. The compute component can include a plurality of compute transistors comprising a second semiconductor material. The second semiconductor material can have a higher concentration of doping ions than the first semiconductor material.


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