The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Aug. 15, 2019
Applicant:
Disco Corporation, Tokyo, JP;
Inventors:
Naoki Murazawa, Tokyo, JP;
Kunimitsu Takahashi, Tokyo, JP;
Assignee:
DISCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G01N 21/64 (2006.01); C30B 33/00 (2006.01); G01N 1/28 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6489 (2013.01); C30B 29/36 (2013.01); C30B 33/00 (2013.01); G01N 1/286 (2013.01); G01N 2001/2866 (2013.01);
Abstract
A facet region detecting method for detecting a facet region of an SiC single crystal ingot includes: an irradiation step of irradiating a first surface of the SiC single crystal ingot with light; a fluorescence intensity detection step of detecting the intensity of fluorescence generated from the first surface of the SiC single crystal ingot by the light; and a determination step of determining a region of the first surface where the fluorescence intensity is comparatively low as a facet region and determining a region where the fluorescence intensity is comparatively high as a non-facet region.