The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Sep. 11, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Jun Liu, Boise, ID (US);
Michael P. Violette, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 27/105 (2006.01); H01L 27/10 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); G11C 13/0004 (2013.01); H01L 27/101 (2013.01); H01L 27/1052 (2013.01); H01L 27/24 (2013.01); H01L 27/2409 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); G11C 2213/31 (2013.01); G11C 2213/32 (2013.01); G11C 2213/72 (2013.01); G11C 2213/75 (2013.01);
Abstract
Variable-resistance material memories include a buried salicide word line disposed below a diode. Variable-resistance material memories include a metal spacer spaced apart and next to the diode. Processes include the formation of one of the buried salicide word line and the metal spacer. Devices include the variable-resistance material memories and one of the buried salicided word line and the spacer word line.