The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Feb. 15, 2019
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Saya Shimomura, Komatsu, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a conductive portion, a gate electrode, and a second electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided selectively on the second semiconductor region. The conductive portion is provided inside the first semiconductor region. The gate electrode is separated from the conductive portion in a first direction. The gate electrode includes a first portion and a second portion. The first portion is provided on the conductive portion. A lower surface of the first portion is positioned higher than a lower end of an interface between the second semiconductor region and the third semiconductor region. The second portion opposes the first semiconductor region, the second semiconductor region, and the third semiconductor region in a second direction.