The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jun. 21, 2018
Applicant:
Tessera, Inc., San Jose, CA (US);
Inventors:
Kangguo Cheng, Schenectady, NY (US);
Juntao Li, Cohoes, NY (US);
Assignee:
Tessera, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 21/762 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 21/30 (2006.01); H01L 29/08 (2006.01); H01L 21/3065 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66818 (2013.01); H01L 21/02236 (2013.01); H01L 21/02645 (2013.01); H01L 21/3003 (2013.01); H01L 21/3065 (2013.01); H01L 21/76202 (2013.01); H01L 21/76264 (2013.01); H01L 21/76283 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/495 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01);
Abstract
Described herein is a FinFET device in which epitaxial layers of semiconductor material are formed in source/drain regions on fin portions. The fin portions can be located within a dielectric layer that is deposited on a semiconductor substrate. Surfaces of the fin portions can be oriented in the {100} lattice plane of the crystalline material of the fin portions, providing for good epitaxial growth. Further described are methods for forming the FinFET device.