The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jun. 24, 2019
Hitachi Power Semiconductor Device, Ltd., Hitachi, JP;
Tomoyasu Furukawa, Tokyo, JP;
Toshiaki Morita, Tokyo, JP;
Daisuke Kawase, Hitachi, JP;
Toshihito Tabata, Hitachi, JP;
Hitachi Power Semiconductor Device, Ltd., Hitachi, JP;
Abstract
A semiconductor device including: a semiconductor element; and a first electrode formed on a first surface of the semiconductor element. The first electrode has a stacked structure including a first electroless Ni plating layer. The first electroless Ni plating layer contains nickel (Ni) and phosphorus (P) as a composition. A phosphorus (P) concentration of the first electroless Ni plating layer is 2.5 wt % to 6 wt % inclusive, and a crystallization rate of NiP in the first electroless Ni plating layer is 0% to 20% inclusive.