The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Jul. 18, 2019
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Chung-Hsien Liu, Taichung, TW;

Chun-Hsu Chen, Taichung, TW;

Lu-Ping Chiang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 27/11517 (2017.01); H01L 21/762 (2006.01); H01L 21/28 (2006.01); H01L 27/11521 (2017.01); H01L 29/66 (2006.01); H01L 27/115 (2017.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/76224 (2013.01); H01L 27/11517 (2013.01); H01L 27/11521 (2013.01); H01L 29/40114 (2019.08); H01L 27/115 (2013.01); H01L 29/6684 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01);
Abstract

A method of manufacturing a memory structure including the following steps is provided. Stacked structures are formed on a substrate, and each of the stacked structures includes a first dielectric layer and a first conductive layer sequentially disposed on the substrate. A first opening is located between two adjacent stacked structure, and the first opening extends into the substrate. At least one isolation structure is formed in the first opening. The isolation structure covers a sidewall of the first dielectric layer. The isolation structure has a recess therein, such that a top profile of the isolation structure is shaped as a funnel. A second dielectric layer is formed on the stacked structures. A second conductive layer is formed on the second dielectric layer and fills the first opening.


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