The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jul. 24, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ching-Chung Su, Tainan, TW;
Jiech-Fun Lu, Madou Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an image sensor including a charge release layer. A photodetector is disposed within a semiconductor substrate. An etch stop layer overlies the photodetector. A color filter overlies the etch stop layer. A dielectric grid structure surrounds the color filter. The charge release layer is sandwiched between the dielectric grid structure and the etch stop layer. The charge release layer surrounds the color filter and comprises a conductive material. The charge release layer directly contacts the color filter.