The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Dec. 27, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Takashi Ishihara, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); G11C 11/4093 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G11C 11/4093 (2013.01); H01L 27/10897 (2013.01);
Abstract

An apparatus includes: a first substrate comprising a first current channel that includes a first plurality of doped regions on the first substrate; a second substrate comprising a second current channel that includes a second plurality of doped regions in the second substrate, wherein: the doped regions of the second substrate are physically separate from those of the first substrate, and the second current channel is aligned colinearly with the first current channel; and a conductive structure extending across the first substrate and the second substrate and electrically connecting matching doped regions of the first current channel and the second current channel.


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