The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Aug. 13, 2018
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Zhiyuan Wu, San Jose, CA (US);
Meng Chu Tseng, Saratoga, CA (US);
Mehul B. Naik, San Jose, CA (US);
Ben-Li Sheu, Sunnyvale, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76846 (2013.01); H01L 21/76873 (2013.01); H01L 21/76876 (2013.01); H01L 2221/1089 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01044 (2013.01);
Abstract
Methods for forming a copper seed layer having improved anti-migration properties are described herein. In one embodiment, a method includes forming a first copper layer in a feature, forming a ruthenium layer over the first copper layer in the feature, and forming a second copper layer on the ruthenium layer in the feature. The ruthenium layer substantially locks the copper layer there below in place in the feature, preventing substantial physical migration thereof.