The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Mar. 14, 2019
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Tong-Yu Chen, Hsinchu, TW;

Chia-Fang Lin, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 23/485 (2013.01);
Abstract

A method for manufacturing an interconnect structure with air gaps includes the following steps. A substrate including a first insulating layer formed thereon is provided. Plural conductive lines are formed in the first insulating layer. A patterned hard mask is formed on the first insulating layer and the conductive lines and exposes portions of the first insulating layer and portions of the conductive lines. The exposed portions of the first insulating layer are then removed to form a plurality of recesses in the first insulating layer. After that, a second insulating layer and a third insulating layer are formed in the recesses to seal the recesses and to form a plurality of air gaps in the recesses. At least two air gaps are respectively formed at two sides of one conductive line of the plurality of conductive lines. A via structure is then formed on the one conductive line.


Find Patent Forward Citations

Loading…