The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Oct. 31, 2017
Lam Research Corporation, Fremont, CA (US);
Leonid Belau, Pleasanton, CA (US);
Eric Hudson, Berkeley, CA (US);
Francis Sloan Roberts, Redwood City, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching features in a stack below a carbon containing mask is provided. The stack is cooled to a temperature below −20° C. An etch gas is provided comprising a free fluorine providing component, a hydrogen containing component, a hydrocarbon containing component, and a fluorocarbon containing component. A plasma is generated from the etch gas. A bias is provided with a magnitude of at least about 400 volts to accelerate ions from the plasma to the stack. Features are selectively etched in the stack with respect to the carbon containing mask.