The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Aug. 29, 2019
Ememory Technology Inc., Hsin-Chu, TW;
Dung Le Tan Hoang, Hsinchu County, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
A memory cell includes a first anti-fuse element, a first select transistor, a second anti-fuse element, a second select transistor, and a sensing control circuit. The first anti-fuse element is coupled to an anti-fuse control line, and the first select transistor transmits a voltage between a first bit line and the first anti-fuse element according to a voltage on the word line. The second anti-fuse element is coupled to the anti-fuse control line. The second select transistor transmits a voltage between a second bit line and the second anti-fuse element according to the voltage on the word line. The sensing control circuit provides a discharging path to a system voltage terminal from the first select transistor or the second select transistor according to states of the first anti-fuse element and the second anti-fuse element during a read operation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile