The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Jul. 26, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shih-Ming Chang, Zhubei, TW;

Minfeng Chen, Hsinchu, TW;

Min-An Yang, Taichung, TW;

Shao-Chi Wei, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/36 (2012.01); G03F 1/58 (2012.01); G03F 1/72 (2012.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 1/58 (2013.01); G03F 1/24 (2013.01); G03F 1/36 (2013.01); G03F 1/72 (2013.01); G03F 7/2004 (2013.01); H01L 21/0274 (2013.01);
Abstract

A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The method includes forming a mask layer over the light blocking layer. The mask layer covers a first portion of the light blocking layer, and the first portion is over a second portion of the transparent substrate. The method includes removing the light blocking layer, which is not covered by the mask layer. The method includes removing the mask layer. The first portion of the light blocking layer is removed during removing the mask layer. The method includes removing the second portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a first light blocking structure in the first recess.


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