The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Dec. 02, 2016
Applicant:

Siltronic Ag, Munich, DE;

Inventors:

Timo Mueller, Burghausen, DE;

Walter Heuwieser, Stammham, DE;

Michael Skrobanek, Freiberg, DE;

Gudrun Kissinger, Lebus, DE;

Assignee:

SILTRONIC AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01); C01B 33/02 (2006.01); H01L 29/34 (2006.01); C30B 29/06 (2006.01); C30B 15/04 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 15/203 (2013.01); C01B 33/02 (2013.01); C30B 15/04 (2013.01); C30B 29/06 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02625 (2013.01); H01L 21/02658 (2013.01); H01L 21/7806 (2013.01); H01L 29/16 (2013.01); H01L 29/34 (2013.01); C01P 2006/80 (2013.01);
Abstract

A semiconductor wafer comprising single-crystal silicon has defined concentrations of oxygen, nitrogen and hydrogen; the semiconductor wafer further contains BMD seeds having a density averaged over the radius of not less than 1×10cmand not more than 1×10cm; surface defects having a density averaged over the radius of not less than 1100 cm; and BMDs, whose density is not lower than a lower limit of 5×10/cm. The semiconductor wafers are produced by a process which enables obtention of the required ranges of concentrations of oxygen, nitrogen, hydrogen, BMD seeds, and BMD's.


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