The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Dec. 14, 2018
Applicant:

Tokyo Electron Limited, Minato, JP;

Inventors:

Takayuki Toshima, Hillsboro, OR (US);

Hiroshi Marumoto, Hillsboro, OR (US);

Yoshinori Nishiwaki, Tokyo, JP;

Trace Hurd, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/06 (2006.01); C11D 7/14 (2006.01); C11D 7/32 (2006.01); C11D 3/00 (2006.01); G03F 7/42 (2006.01); H01L 21/768 (2006.01); C11D 3/04 (2006.01); C11D 3/08 (2006.01); C11D 3/39 (2006.01); C11D 7/36 (2006.01); C11D 11/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C11D 7/06 (2013.01); C11D 3/0047 (2013.01); C11D 3/0073 (2013.01); C11D 3/044 (2013.01); C11D 3/08 (2013.01); C11D 3/3947 (2013.01); C11D 7/14 (2013.01); C11D 7/32 (2013.01); C11D 7/3209 (2013.01); C11D 7/36 (2013.01); C11D 11/0047 (2013.01); G03F 7/42 (2013.01); G03F 7/425 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76814 (2013.01);
Abstract

An alkaline wet solution for protecting features on a patterned substrate and a substrate processing method using the alkaline wet solution are described. The method includes providing a patterned substrate containing a low-k material, a metal oxide feature, and an etch residue, performing a treatment process that exposes the patterned substrate to an alkaline wet solution that forms a protective coating on the metal oxide feature, the alkaline wet solution containing a mixture of 1) water, 2) ammonium hydroxide, a quaternary organic ammonium hydroxide, or a quaternary organic phosphonium hydroxide, and 3) dissolved silica, and performing a wet cleaning process that removes the etch residue but not the metal oxide feature that is protected by the protective coating. The patterned substrate can further include a metallization layer and the alkaline wet solution can further contain 4) an inhibitor that protects the metallization layer from etching by the alkaline wet solution.


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