The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Apr. 07, 2016
Applicant:

Siltectra Gmbh, Dresden, DE;

Inventors:

Franz Schilling, Radeberg, DE;

Wolfram Drescher, Dresden, DE;

Jan Richter, Dresden, DE;

Assignee:

Siltectra GmbH, Dresden, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B28D 5/00 (2006.01); B28D 1/00 (2006.01); H01L 21/00 (2006.01); B81C 1/00 (2006.01); B23K 26/53 (2014.01); B28D 1/22 (2006.01); H01L 21/762 (2006.01); H01L 31/18 (2006.01); B23K 101/36 (2006.01);
U.S. Cl.
CPC ...
B28D 5/0011 (2013.01); B23K 26/53 (2015.10); B28D 1/221 (2013.01); B81C 1/0038 (2013.01); B81C 1/00357 (2013.01); H01L 21/76251 (2013.01); H01L 31/1804 (2013.01); H01L 31/1896 (2013.01); B23K 2101/36 (2018.08); B81C 2201/0192 (2013.01); Y10T 156/1059 (2015.01);
Abstract

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate () for removing a solid layer (), in particular a wafer; producing modifications (), in particular by means of laser beams (), in the donor substrate () in order to specify a crack course; providing a carrier substrate () for holding the solid layer (); bonding the carrier substrate () to the donor substrate () by means of a bonding layer (), wherein the carrier substrate () is provided for increasing the mechanical strength of the solid layer () for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer () on the carrier substrate (); thermally loading the stress-producing layer () in order to produce stresses in the donor substrate (), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer () from the donor substrate () such that the solid layer () is removed together with the bonded carrier substrate ().


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