The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Aug. 27, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

William C. Waldrop, Allen, TX (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); H03K 19/003 (2006.01); H03K 19/20 (2006.01); G11C 11/4076 (2006.01); H03K 5/134 (2014.01);
U.S. Cl.
CPC ...
H03K 19/00384 (2013.01); G11C 11/4076 (2013.01); H03K 5/134 (2014.07); H03K 19/003 (2013.01); H03K 19/00369 (2013.01); H03K 19/20 (2013.01);
Abstract

Systems, methods, and devices are provided for increasing uniformity of wear in semiconductor devices due to, for example, negative-bias temperature instability (NBTI). The method may include receiving a first NBTI control signal. The method may involve receiving a second NBTI control signal based at least in part on the first NBTI control signal. The method may also involve asserting the first NBTI control signal at a clock input pin of a latch. Further, the method may include asserting the second NBTI control signal at a data input pin of the latch. The method may additionally involve toggling electrical elements downstream of the latch based at least in part on an output of the latch based on the first and second NBTI control signals to increase uniformity of wear on the electrical elements in a default low-power state during NBTI toggling mode.


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