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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10840381 B1

PDFFull Text
Expired
Date of Patent:
Nov. 17, 2020

Filed:

Aug. 10, 2016

Nanosheet and nanowire mosfet with sharp source/drain junction

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Josephine B. Chang, Bedford Hills, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Michael A. Guillorn, Cold Springs, NY (US);

Xin Miao, Guilderland, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Daniel Morris

Primary Examiner:

Eric A Ward

Assistant Examiner:

Eric K Ashbahian

Int. Cl.
CPC ...
H01L 21/225 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/2255 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device that includes a gate structure present on at least two suspended channel structures, and a composite spacer present on sidewalls of the gate structure. The composite spacer includes a cladding spacer present along a cap portion of the gate structure, and an inner spacer along the channel portion of the gate structure between adjacent channel semiconductor layers of at least two suspended channel structures. The inner spacer may be composed of an n-type or p-type doped glass.

Find Patent Forward Citations

Quick Actions:

Chang, Josephine. (2020). Nanosheet and nanowire mosfet with sharp source/drain junction (U.S. Patent No. 10840381). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10840381

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