The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Nov. 18, 2019
Applicant:
Fu-chang Hsu, San Jose, CA (US);
Inventor:
Fu-Chang Hsu, San Jose, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/11514 (2017.01); H01L 27/11597 (2017.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); H01L 27/11514 (2013.01); H01L 27/11597 (2013.01); H01L 27/224 (2013.01); H01L 27/2409 (2013.01); H01L 27/2427 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/1226 (2013.01); H01L 45/1608 (2013.01);
Abstract
Three-dimensional vertical memory array cell structures and processes. In an exemplary embodiment, a cell structure includes a word line, a selector layer, and a memory layer. The word line, the selector layer, and the memory layer form a vertical cell structure in which at least one of the selector layer and the memory layer are segmented to form a segment that blocks sneak path leakage current on the word line.