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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10840247 B1

PDFFull Text
Date of Patent:
Nov. 17, 2020

Filed:

Aug. 22, 2019

Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chia-Yu Chen, White Plains, NY (US);

Bruce B. Doris, Slingerlands, NY (US);

Hong He, Schenectady, NY (US);

Rajasekhar Venigalla, Hopewell Junction, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Douglas Pearson

Primary Examiner:

Peniel M Gumedzoe

Assistant Examiner:

Christopher A Johnson

Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/18 (2006.01); H01L 27/12 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/18 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/045 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device that includes at least one germanium containing fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. The semiconductor device also includes at least one germanium free fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. A gate structure is present on a channel region of each of the germanium containing fin structure and the germanium free fin structure. N-type epitaxial semiconductor material having a square geometry present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium free fin structures. P-type epitaxial semiconductor material having a square geometry is present on the source and drain portions of the sidewalls having the (100) plane orientation of the germanium containing fin structures.

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