The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Nov. 20, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Hung-Shu Huang, Taichung, TW;
Ming-Chyi Liu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/522 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01); H01L 23/31 (2006.01); H01L 23/485 (2006.01); H01L 21/768 (2006.01); H01L 27/11563 (2017.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/02274 (2013.01); H01L 21/56 (2013.01); H01L 21/768 (2013.01); H01L 23/3192 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 24/05 (2013.01); H01L 29/42344 (2013.01); H01L 29/792 (2013.01); H01L 27/11563 (2013.01); H01L 2224/02331 (2013.01);
Abstract
A semiconductor device includes a substrate, a conductive pad region electrically coupled to the substrate, a first dielectric layer over the conductive pad region, and a passivation layer over the first dielectric layer, wherein the passivation layer includes a laterally-extending portion covering the first dielectric layer and a vertically-extending portion on a sidewall of the first dielectric layer. The laterally-extending portion and the vertically-extending portion of the passivation layer are joined along a vertically-extending boundary.