The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Nov. 21, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/3212 (2013.01); H01L 21/82385 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 27/0922 (2013.01); H01L 27/0928 (2013.01); H01L 29/0642 (2013.01);
Abstract
A method of manufacturing a semiconductor structure includes forming a first dummy strip over a first active region and an isolation region of a substrate, removing a first portion of the first dummy strip from the first active region to form a first opening, filling the first opening with a first metal composition, removing a second portion of the first dummy strip from the isolation region to form a second opening, and filling the second opening with a second metal composition.