The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Jul. 24, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Tyler G. Hansen, Boise, ID (US);

Ming-Chuan Yang, Meridian, ID (US);

Vishal Sipani, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H01L 23/535 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76838 (2013.01); H01L 21/76877 (2013.01); H01L 23/522 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H01L 21/76816 (2013.01); H01L 23/5329 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Methods of forming integrated circuits forming a first conductive structure at a first level of the integrated circuit, forming a first conductor at a second level of the integrated circuit to be in physical and electrical contact with the first conductive structure, forming a second conductor at the second level to be in physical and electrical contact with the first conductive structure and to be parallel to the first conductor, forming a third conductor at the second level to be isolated from the first conductive structure and to be parallel to the first conductor and to the second conductor, and forming a second conductive structure at a third level of the integrated circuit to be in physical and electrical contact with the second conductor and with the third conductor, wherein the second level is between the first level and the third level.


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