The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Jul. 16, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Eric J. Bergman, Kalispell, MT (US);

John L. Klocke, Kalispell, MT (US);

Charles Sharbono, Whitefish, MT (US);

Kyle Moran Hanson, Kalispell, MT (US);

Paul McHugh, Kalispell, MT (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/324 (2006.01); H01L 21/687 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/324 (2013.01); H01L 21/68764 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01);
Abstract

Methods of etching a semiconductor substrate may include applying an etchant to the semiconductor substrate. The semiconductor substrate may include an exposed region of an oxygen-containing material and an exposed region of a nitrogen-containing material. The methods may include heating the semiconductor substrate from a first temperature to a second temperature. The methods may include maintaining the semiconductor substrate at the second temperature for a period of time sufficient to perform an etch of the nitrogen-containing material relative to the oxygen-containing material. The methods may also include quenching the etch subsequent the period of time.


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