The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Feb. 15, 2018
Applicant:

Yield Engineering Systems, Inc., Livermore, CA (US);

Inventors:

William Moffat, San Jose, CA (US);

Craig Walter McCoy, San Jose, CA (US);

Assignee:

Yield Engineering Systems, Inc., Livermore, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32623 (2013.01); H01J 37/321 (2013.01); H01J 37/32009 (2013.01); H01J 37/3244 (2013.01); H01J 37/32357 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01L 21/02274 (2013.01); H01L 21/3065 (2013.01); H01J 2237/327 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01); H01J 2237/3342 (2013.01); H01J 2237/3343 (2013.01);
Abstract

A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.


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