The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Sep. 19, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Daniele Cantarelli, Villasanta, IT;

Augusto Benvenuti, Lallio, IT;

Massimo Ernesto Bertuccio, San Donato Milanese, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/32 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/32 (2013.01); G11C 16/3427 (2013.01); G11C 7/12 (2013.01); G11C 16/04 (2013.01); G11C 2211/5621 (2013.01);
Abstract

Methods of operating a memory, and memory configured to perform similar methods, might include performing a sense operation on a particular memory cell of a string of series-connected memory cells, discharging the respective access line for a second memory cell of the string of series-connected memory cells to a first voltage level, discharging the respective access line for the particular memory cell to a second voltage level higher than the first voltage level, and discharging the respective access line for a third memory cell of the string of series-connected memory cells to a third voltage level lower than the second voltage level and higher than the first voltage level.


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