The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Nov. 06, 2018
Winbond Electronics Corp., Taichung, TW;
Ping-Kun Wang, Taichung, TW;
Shao-Ching Liao, Taichung, TW;
Yu-Ting Chen, Taichung, TW;
Ming-Che Lin, Taichung, TW;
Chien-Min Wu, Taichung, TW;
Chia-Hua Ho, Taichung, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
A power on reset method for a resistive memory storage device is provided and includes performing a forming procedure on a memory cell of the resistive memory storage device. The forming procedure includes applying at least one forming voltage and at least one reset voltage to the memory cell. The forming procedure further includes a thermal step. The step of applying at least one reset voltage to the memory cell may be preformed before or after the thermal step. After one forming voltage is applied, if the memory cell passes verification, the next forming voltage is not applied to the memory cell. After the thermal step, if the memory cell passes verification, the next forming voltage is not applied to the memory cell. In addition, after one reset voltage is applied, if the memory cell passes verification, the next reset voltage is not applied to the memory cell.