The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Apr. 24, 2019
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventor:

Ching-Hsiang Hsu, Hsinchu County, TW;

Assignee:

eMemory Technology Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 7/12 (2006.01); G11C 7/14 (2006.01); G06F 7/58 (2006.01);
U.S. Cl.
CPC ...
G11C 7/106 (2013.01); G06F 7/588 (2013.01); G11C 7/12 (2013.01); G11C 7/14 (2013.01);
Abstract

A random bit cell includes a latch, a voltage selector, a first non-volatile storage element, and a second non-volatile storage element. The latch has a first terminal coupled to a first local bit line, and a second terminal coupled to a second local bit line. The first non-volatile storage element has a first terminal coupled to the first local bit line, and a second terminal coupled to the voltage selector. The second non-volatile storage element has a first terminal coupled to the second local bit line, and a second terminal coupled to the voltage selector. During an initial operation, the first terminals of the first non-volatile storage element and the second non-volatile storage element are floating. During an enroll operation, the first terminals of the first non-volatile storage element and the second non-volatile storage element receive a program voltage from the voltage selector.


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