The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

May. 07, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Wei Wang, Yorktown Heights, NY (US);

Balasubramanian Pranatharthiharan, Watervliet, NY (US);

Injo Ok, Loudonville, NY (US);

Kevin W. Brew, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1683 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1293 (2013.01); H01L 45/144 (2013.01);
Abstract

A method is presented for constructing a three-dimensional (3D) stack phase change memory (PCM) device. The method includes forming a plurality of stack layers over a plurality of conductive lines, the plurality of conductive lines formed within trenches of an inter-layer dielectric (ILD), forming isolation trenches extending through the plurality of stack layers, etching the plurality of stack layers to define an opening, filling the opening with at least a phase change material, and constructing vias to the plurality of conductive lines.


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