The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Feb. 27, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hiroyuki Miyazoe, White Plains, NY (US);

Takashi Ando, Tuckahoe, NY (US);

Asit Ray, Baldwin Place, NY (US);

Seyoung Kim, White Plains, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); H01L 27/2463 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01);
Abstract

Devices and/or methods that facilitate forming a resistive memory crossbar array with a multilayer hardmask are provided. In some embodiments, a resistive random access memory (RRAM) can comprise a multilayer hardmask comprising three layers, an interlayer oxide between a first layer of silicon nitride and a second layer of silicon nitride. In other embodiments, an RRAM can comprise a multilayer hardmask comprising two layers, a layer of an oxide on a layer of silicon nitride.


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