The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Sep. 18, 2018
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Gordon M. Grivna, Mesa, AZ (US);

Steven M. Etter, Phoenix, AZ (US);

Hiroyuki Suzuki, Kazo, JP;

Miki Ichiyanagi, Ohta, JP;

Toshihiro Hachiyanagi, Ota, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 21/764 (2006.01); H01L 49/02 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/764 (2013.01); H01L 21/76232 (2013.01); H01L 28/10 (2013.01); H01L 29/0692 (2013.01); H01L 29/401 (2013.01); H01L 29/407 (2013.01); H01L 29/408 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract

An electronic device can include a substrate and an insulating structure. In an aspect, an anchor can include a portion of the substrate that extends into the insulating structure or a portion of the insulating structure that extends into the substrate. In another aspect, a process of forming an electronic device can include patterning a substrate to define a trench and a first anchor; and forming an insulating structure within the trench and adjacent to the first anchor. In a further aspect, a process of forming an electronic device can include patterning a substrate to define a trench having a sidewall and a first pillar spaced apart from the sidewall; doping the first pillar to change a conductivity type of the first pillar; and forming an insulating structure that surrounds the first pillar.


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