The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Apr. 17, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chih-Ming Chen, Hsinchu, TW;

Szu-Yu Wang, Hsinchu, TW;

Chung-Yi Yu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 27/108 (2006.01); H01L 21/302 (2006.01); H01L 49/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01); H01L 21/66 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 21/822 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/02016 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/302 (2013.01); H01L 21/30625 (2013.01); H01L 21/3205 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/78 (2013.01); H01L 22/20 (2013.01); H01L 24/83 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/10829 (2013.01); H01L 27/10861 (2013.01); H01L 28/40 (2013.01); H01L 28/60 (2013.01); H01L 21/8221 (2013.01); H01L 24/73 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06555 (2013.01); H01L 2225/06575 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/3511 (2013.01);
Abstract

Some embodiments relate to a method. In this method, a semiconductor wafer having a frontside and a backside is received. A frontside structure is formed on the frontside of the semiconductor wafer. The frontside structure exerts a first wafer-bowing stress that bows the semiconductor wafer by a first bow amount. A characteristic is determined for one or more stress-inducing films to be formed based on the first bow amount. The one or more stress-inducing films are formed with the determined characteristic on the backside of the semiconductor wafer and/or on the frontside of the semiconductor wafer to reduce the first bow amount in the semiconductor wafer.


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