The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Nov. 15, 2016
Qualcomm Incorporated, San Diego, CA (US);
Yanxiang Liu, San Diego, CA (US);
Haining Yang, San Diego, CA (US);
Youseok Suh, San Diego, CA (US);
Jihong Choi, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A semiconductor device may include a source/drain contact trench adjacent to a gate. The source/drain contact trench may include a first portion and a second portion on the first portion. The semiconductor device also may include an insulating contact spacer liner within the source/drain contact trench. The insulating contact spacer liner contacts the first portion but not the second portion of the source/drain contact trench. The semiconductor device may further include a conductive material within the insulating contact spacer liner and the second portion of the source/drain contact trench. The conductive material may land in a source/drain region of the semiconductor device.