The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Aug. 30, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Rajasekhar Venigalla, Boise, ID (US);

Ravikumar Ramachandran, Pleasantville, NY (US);

Albert Chu, Nashua, NH (US);

Alan Thomas, Hopewell Junction, NY (US);

Kafai Lai, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/3213 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/82385 (2013.01); H01L 21/823878 (2013.01); H01L 21/3083 (2013.01); H01L 21/32139 (2013.01); H01L 27/0924 (2013.01);
Abstract

A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a gate cut mask having one cut window exposing one or more portions of multiple sacrificial gate structures of the at least one plurality of sacrificial gate structures. The multiple sacrificial gate structures having been formed over portions of in structures. The method comprises forming a gate cut mask a plurality of semiconductor fins and a plurality of sacrificial gate structures. The gate cut mask being formed with one cut window exposing one or more portions of multiple sacrificial gate structures of the plurality of sacrificial gate structures. At least the portion of multiple sacrificial gate structures and one or more portions of each semiconductor fin of the plurality of semiconductor fins underlying the one or more portions of one of the multiple sacrificial gate structures are removed.


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