The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Aug. 13, 2018
Applicant:
Globalfoundries Inc., Grand Cayman OT, KY;
Inventors:
Hui Zang, Guilderland, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Garo Jacques Derderian, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract
Device structures and fabrication methods for a field-effect transistor. A semiconductor fin includes a first section and a second section in a lengthwise arrangement, a first gate structure overlapping the first section of the semiconductor fin, and a second gate structure overlapping the second section of the semiconductor fin. A pillar is arranged in the first section of the semiconductor fin. The pillar extends through a height of the semiconductor fin and across a width of the semiconductor fin.