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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10832967 B1

PDFFull Text
Date of Patent:
Nov. 10, 2020

Filed:

Aug. 13, 2018

Tapered fin-type field-effect transistors

Applicant:

Globalfoundries Inc., Grand Cayman OT, KY;

Inventors:

Hui Zang, Guilderland, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Garo Jacques Derderian, Saratoga Springs, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Thompson Hine LLP

Francois Pagette

Primary Examiner:

Mohammed Shamsuzzaman

Assistant Examiner:

Aaron J Gray

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract

Device structures and fabrication methods for a field-effect transistor. A semiconductor fin includes a first section and a second section in a lengthwise arrangement, a first gate structure overlapping the first section of the semiconductor fin, and a second gate structure overlapping the second section of the semiconductor fin. A pillar is arranged in the first section of the semiconductor fin. The pillar extends through a height of the semiconductor fin and across a width of the semiconductor fin.

Find Patent Forward Citations

Zang, Hui. (2020). Tapered fin-type field-effect transistors (U.S. Patent No. 10832967). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10832967

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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