The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Apr. 11, 2018
International Business Machines Corporation, Armonk, NY (US);
Romain Lallement, Troy, NY (US);
Stuart A. Sieg, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for modeling planarization performance of a given material includes patterning a first photoresist layer over a first material deposited over a substrate. The method also includes etching portions of the first material exposed by the patterned first photoresist layer to create a patterned topography of the first material comprising two or more different design macros in two or more different regions. The method further includes coating the given material over the patterned topography of the first material, patterning a second photoresist layer over the given material, measuring the critical dimension of a metrology feature in each of the two or more different regions, and utilizing the measured critical dimensions of the metrology feature in the two or more different regions to generate a model of the planarization performance of the given material by relating the measured critical dimensions to focal planes of the given material.