The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Feb. 21, 2019
Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;
Hiroshi Kobayashi, Hamamatsu, JP;
Takeshi Endo, Hamamatsu, JP;
Hiroki Moriya, Hamamatsu, JP;
Toshinari Mochizuki, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
The present embodiment relates to an ion detector provided with a structure for suppressing degradation over time in an electron multiplication mechanism in the ion detector. The ion detector includes a dynode unit, serving as an electron multiplication mechanism, which multiplies secondary electrons which are emitted in response to incidence of ions, and a semiconductor detector having an electron multiplication function. Further, a focus electrode having an opening that allows passage of secondary electrons is disposed on a trajectory of secondary electrons which are directed from the dynode unit toward the semiconductor detector, and the focus electrode functions to guide secondary electrons from the dynode unit onto an electron incidence surface of the semiconductor detector.