The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Oct. 31, 2018
Applicant:

Avalanche Technology, Inc., Fremont, CA (US);

Inventors:

Dean K. Nobunaga, Cupertino, CA (US);

Ebrahim Abedifard, San Jose, CA (US);

Assignee:

Avalanche Technology, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1659 (2013.01); G11C 11/161 (2013.01); G11C 11/1697 (2013.01); G11C 11/00 (2013.01); G11C 11/1675 (2013.01);
Abstract

The present invention is directed to a memory circuitry that includes a magnetic memory element and a selector coupled in series between a first conductive line and a second conductive line; a current detector coupled to the second conductive line; and a means for supplying a sufficiently high voltage to the first conductive line for turning on the selector. When the selector turns on, the current detector detects a current flowing across the selector and effectuates a current limiter to reduce the current while maintaining the selector on. The memory circuitry may be operated by applying a sufficiently high voltage to the first conductive line for turning on the selector; reducing a current flowing through the selector while maintaining the sufficiently high voltage on the first conductive line; and determining a resistance state of the magnetic memory element.


Find Patent Forward Citations

Loading…