The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

May. 08, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Won Joo Park, Hwaseong-si, KR;

Hyung Joo Lee, Suwon-si, KR;

Seuk Hwan Choi, Hwaseong-si, KR;

Dong Seok Nam, Yongin-si, KR;

Yoon Taek Han, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/00 (2020.01); G03F 1/70 (2012.01); G01N 27/60 (2006.01); G01B 15/00 (2006.01); G03F 1/84 (2012.01);
U.S. Cl.
CPC ...
G03F 1/70 (2013.01); G01B 15/00 (2013.01); G01N 27/60 (2013.01); G03F 1/84 (2013.01); G01B 2210/56 (2013.01);
Abstract

A critical dimension measurement system includes a voltage measurement circuit, a control circuit, and a critical dimension measurement circuit. The voltage measurement circuit may measure potentials of mask patterns of a photomask. The control circuit may include an information storage circuit for storing distribution information on the potentials of the mask patterns, measured by the voltage measurement circuit, and information on layout patterns corresponding to the mask patterns of the photomask. The critical dimension measurement circuit may be operated, by the control circuit, in a first measurement mode and a second measurement mode running for a shorter time than the first measurement mode, and measure critical dimensions of the mask patterns.


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