The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Jun. 19, 2019
International Business Machines Corporation, Armonk, NY (US);
Nicholas Anthony Lanzillo, Troy, NY (US);
Benjamin D. Briggs, Waterford, NY (US);
Michael Rizzolo, Delmar, NY (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
Theodorus E. Standaert, Clifton Park, NY (US);
James Stathis, Poughquag, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a device magnetic tunnel junction (MTJ) and sensor MTJs. A spin polarization of a free layer of the device MTJ is configurable based at least in part on electrical energy supplied to the device MTJ. A spin polarization of a corresponding free layer of each sensor MTJ is configurable based at least in part on a magnetic field created by the spin polarization of the free layer of the device MTJ. A circuit disposed is in electrical communication with the plurality of sensor MTJs and configured to determine the corresponding free layer spin polarizations of each of the sensor MTJs based at least in part on electrical energy supplied to the sensor MTJs by the circuit. The circuit is configured to determine a magnetoresistance of the device MTJ based at least in part on the determined corresponding free layer spin polarizations of the sensor MTJ.