The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Nov. 01, 2018
Applicant:
Iqe Plc, Cardiff, GB;
Inventors:
Rodney Pelzel, Emmaus, PA (US);
Andrew Clark, Mountain View, CA (US);
Rytis Dargis, Oak Ridge, NC (US);
Patrick Chin, Zhubei, TW;
Michael Lebby, San Francisco, CA (US);
Assignee:
IQE plc, Cardiff, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/511 (2013.01); H01L 21/0242 (2013.01); H01L 21/02123 (2013.01); H01L 21/02178 (2013.01); H01L 21/02293 (2013.01); H01L 21/02381 (2013.01); H01L 21/02414 (2013.01); H01L 21/02433 (2013.01); H01L 21/02483 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02502 (2013.01); H01L 21/02505 (2013.01); H01L 21/02521 (2013.01); H01L 29/517 (2013.01);
Abstract
Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.