The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Feb. 26, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ji Young Kim, Seoul, KR;

Kyu Hee Han, Hwaseong-si, KR;

Sung Bin Park, Suwon-si, KR;

Yeong Gil Kim, Hwaseong-si, KR;

Jong Min Baek, Seoul, KR;

Kyoung Woo Lee, Hwaseong-si, KR;

Deok Young Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/31144 (2013.01); H01L 21/76804 (2013.01); H01L 21/76877 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01);
Abstract

A semiconductor device includes a lower wiring, an interlayer insulation film above the lower wiring and including a first portion having a first density, and a second portion on the first portion, the first portion and the second portion having a same material, and the second portion having a second density smaller than the first density, an upper wiring in the second portion of the interlayer insulating film, and a via in the first portion of the interlayer insulating film, the via connecting the upper wiring and the lower wiring.


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